型号:

BC618G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANSISTOR DARL NPN 55V TO-92
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
BC618G PDF
产品变化通告 Product Discontinuation 01/Oct/2008
标准包装 5,000
系列 -
晶体管类型 NPN - 达林顿
电流 - 集电极 (Ic)(最大) 1A
电压 - 集电极发射极击穿(最大) 55V
Ib、Ic条件下的Vce饱和度(最大) 1.1V @ 200µA,200mA
电流 - 集电极截止(最大) 50nA
在某 Ic、Vce 时的最小直流电流增益 (hFE) 10000 @ 200mA,5V
功率 - 最大 625mW
频率 - 转换 150MHz
安装类型 通孔
封装/外壳 TO-226-3、TO-92-3 标准主体
供应商设备封装 TO-92-3
包装 散装
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